A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics

We developed an improved ultrafast measurement method for threshold voltage V/sub th/ measurement of MOSFETs. We demonstrate I/sub d/--V/sub g/ curve measurement within 1 μs to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantitatatively. The ultrafast V/sub th/ measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO₂ gate dielectric is demonstrated.