On the defects introduced by AC/DC degradation in SOI "smart-cut" body contact MOSFETS

The impact of static (DC) and dynamic (AC) hot carrier stress on SOI "smart-cut" body contact MOSFETs is investigated by means of Deep Level Transient Spectroscopy (DLTS) technique. The study was focused on drain current signal recording. Transient parasitic effects such as drain current overshoot undershoot were suppressed by adjusting properly an electrometer amplifier gain unit to the transistor body contact under DC degradation regime the revelation of discrete traps, some of which were previously reported in literature, is evident. Under AC degradation regime, although the presence of interface states is dominant, shallow states are also monitored