Quantum dot photonics: edge emitter, amplifier and VCSEL

Low transparency current density and improved temperature stability with a large characteristic temperature T/sub 0/>650 K up to 80/spl deg/C are demonstrated for 1.3 /spl mu/m MBE grown QD-edge emitters. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10/sup -12/ for a 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QDs achieved a chip gain of 28 dB. Conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a CW output power of 1.7 mW and differential efficiency of 20 % at 20/spl deg/C. First MOCVD grown QD-VCSEL with selectively oxidized DBRs and 9 QD-layers were realized, emission was at 1.1 /spl mu/m. A CW multimode output power of 1.5 mW and external efficiency of 45 % was achieved at 20/spl deg/C. The minimum threshold current from a device with 2 /spl mu/m aperture was 85 /spl mu/A.