Optimization of sb-heterostructure diode for low noise detection

Current millimeter wave imaging cameras based on square-law detector diodes require an RF low noise amplifier (LNA) to boost the signal above the detector noise floor. Sb-heterostructure diodes, fabricated from epitaxial layers of InAs and AlGaSb, have shown very high zero-biased sensitivities at W-band, but the devices studied were not optimized for low noise [1-3].