Integration of III-V nanowires in Si technology

The integration of Ill-V semiconductors in Si technology is very beneficial because of the readily available inexpensive predeveloped Si technology and the higher charge mobilities as well as the wide range of direct band-gaps of many Ill-V semiconductors. Here we will report on our recent progress in the field of Ill-V nanowire integration onto Si. We have succeeded in the epitaxial growth of Ill-V nanowires on Si and Ge substrates [1]. Furthermore, for the development of a suitable technology a stable and reliable growth method is needed that is capable of a high beat rate. These requirements are fulfilled by the metal-organic vapour phase epitaxy (MOVPE) method. It will be shown that we are able to grow n- and p-doped Ill-V nanowires by MOVPE.