Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs

New structural approach of Gd
₂
O
₃
incorporated HfO
₂
multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd
₂
O
₃
with bottom HfO
₂
bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd
₂
O
₃
/HfO
₂
dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO
₂
. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd
₂
O
₃
/HfO
₂
are observed