Laser beam induced current characterisation of HgCdTe processed using plasma techniques

In this paper, laser beam induced current (LBIC) has been applied to the characterization of HgCdTe n-on-p junctions fabricated through plasma induced type conversion using an inductively coupled plasma reactive ion etching (ICPRIE) tool. The nondestructive LBIC technique allows for characteristics of junctions formed under a number of different ICPRIE plasma process conditions to be investigated using only two remote contacts. This is done in order to refine the fabrication procedure which aims for controlled doping modification to produce high performance photodiodes.