Role of temperature and gas-chemistry in micro-masking of InP by ICP etching

This study demonstrates that micro-masking in Cl/sub 2/-CH/sub 4/-H/sub 2/ ICP etching of semi-insulating InP is attributed to an excessive heating of the sample in conjunction with the use of methane. On the other hand, this work also shows that micro-masking of n-InP in Cl/sub 2/-Ar-H/sub 2/ ICP etching is due to the slow desorption of InCl/sub 3/.