Recent progress in nitride-based UV light emitters

Nitride-based UV light emitters are recently improved by the progress of crystal growth technologies of AlGaN-based heterostructure. By applying hetero-epitaxial lateral overgrowth (HELO) technique, a high performance UV-LED and a short lasing-wavelength UV-LD have been demonstrated. The UV-LED is also applicable to visible emitters in a combination with wavelength converter. A yellowish white LED with B and N doped SiC substrate was demonstrated.