AC-SONOS: a single-poly, assist-charge induced source-side-injection SONOS low power nonvolatile memory

A novel SONOS memory with an assist-charge (AC) structure is proposed to achieve both fast cell programming time of 0.1/spl mu/s and low programming current (<10/spl mu/).The assist-charge serves the function of a split gate and it electrically emulates programming by source-side injection (SSI). This very simple single-poly structure shows good promise for future low power, high speed and high-density applications.