Simulation and characterization of high-frequency performances of advanced MIM capacitors

High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si/sub 3/N/sub 4/ dielectric are presented. The frequency dependent behavior of capacitors is numerically and experimentally extracted over a wide frequency bandwidth. Numerical results are validated by comparison to experimental results. An equivalent circuit model of capacitors including four parameters is developed for a better understanding of the frequency dependent behavior. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates.