The impact of channel engineering on the performance and reliability of LDMOS transistors

In this paper, we study the performance and reliability of LDMOS (laterally diffused MOS) transistors, developed in a 0.25/spl mu/m SiGe:C BiCMOS technology, for two different channel doping schemes a) uniform and b) single-sided halo (SH). We show that SH LDMOS transistors are more reliable and offer better DC and high frequency performance. We also demonstrate BV/sub DS/ *F/sub t/ values up to 630GHzV with SH LDMOS transistors.