Modeling MOSFET and circuit degradation through SPICE

In this work we investigate the impact of MOSFET degradation on the operation of real circuits through SPICE simulation. We show that by changing a few parameters in a LEVEL 3 model it is possible to reasonably account for the degradation in the characteristics of a single device following electrical stress. We then validate this approach on a simple circuit, a current mirror, and finally analyze the degradation of a more complex one, a voltage controlled oscillator.