Detection of THz electromagnetic radiation with Si/SiGe HFET

We report an investigation on THz signal detection using plasma instabilities in two-dimensional electron gas of a tensile strained silicon quantum well of Si/SiGe hetero-FET. It is, to our knowledge, the first measurements of THz nonlinear behaviour in such silicon-based devices. We discuss the key parameters which are controlling detection and oscillation in THz range. It appears that strained channel Si-based devices are well suited for such applications.