High performance ZnO nanowire field effect transistor

A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nanoscale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 /spl mu/S, a mobility of 450 cm/sup 2//Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 10/sup 6/.