Radiation test results on first silicon in the design against radiation effects (DARE) library

This paper describes the first use of a Radiation Hardened by Design (DARE: Design Against Radiation Effects) library for the UMC 180 nm CMOS six-layer metal technology in a telecom application specific integrated circuit (ASIC). An innovative adapted "design for test" approach has been used to allow the evaluation of the behavior of this ASIC under radiation. Radiation tests results and conclusions on future use of this library are also presented.