Mixed device/circuit model of the high-speed p-i-n photodiode

The mixed device/circuit model of the p-i-n photodiode based on 2-D drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and piecewise harmonic balance method is developed. The model takes into account Fermi statistic, thermionic emission and tunneling at the hetero-interfaces and is suitable to simulate p-i-n photodiode with axial symmetry both in time and frequency domains.