Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

Effects of post-growth rapid thermal annealing (RTA) on optical and structural properties of an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As multi-quantum-well (MQW) structure on a GaAs substrate by using an InAlAs/InGaAlAs metamorphic buffer were investigated. Photoluminescence spectrum and triple-axis (004) contour maps showed improvement in crystalline quality of the metamorphic MQW structure through the post-growth RTA.