Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer

Photoluminescence (PL) of SiGe/Si(001) self-assembled islands grown on a strained Si/sub 1-x/Ge/sub x/ layer (x/spl les/20%) has been investigated. PL signal from the islands with different shapes and the nonlinear dependence of the intensity of the PL signal from the islands at room temperature on composition of the GeSi layer have been observed.