On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

A novel Si-based waveguide electro-optical modulator with shunt MOS capacitors is proposed, simulated, and analyzed. A positive bias is applied on the special n-i-p-i-n structure to conduct the electro-optic modulation. A phase modulation efficiency of V/sub /spl pi//L/sub /spl pi// = 3.2 (V/spl middot/cm) has been demonstrated for 4 /spl mu/m inner-rib width. For 1 /spl mu/m inner-rib width, the switching speed exceeds 7.5 GHz. With the excellent high frequency characteristics, the device is believed to be of great potential for the all silicon-based OEICs applications.