Deep-defect related generation-recombination noise in GaAs

We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission energy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.