Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Single-crystal 3C-SiC films has been deposited on Si(111) substrates in a hot-wall chemical vapor deposition system. The temperature range for growing the SiC films is from 1030/spl deg/C to 1130/spl deg/C. The reaction precursors are SiH/sub 4/ and C/sub 2/H/sub 4/, while H/sub 2/ is the carrier gas. The effect of the partial pressure of ethene P/sub C2H4/ on the film quality has been investigated by X-ray diffractometry and Raman scattering. Within the P/sub C2H4/ range in this work, the higher P/sub C2H4/ could help to improve the quality of 3C-SiC films. The thickness and refractive index of films was measured with spectroscopic ellipsometry. The effect of P/sub C2H4/ on the growth rate is also explained with the reported standpoint of the initial deposition process.