Improved optical and electrical property of ITO film prepared using a magnetron sputter type negative metal ion beam deposition method

This paper presents significant progress in the synthesis of transparent and conducting ITO thin films using a magnetron sputter type negative metal ion beam deposition method. The ITO films prepared at room temperature (<50/spl deg/C) had the low resistivity of 5/spl times/10/sup -4/ /spl Omega/ cm/sup -1/ and high optical transmittance of 84% in a visible region. According to a result obtained by AFM analysis, rms roughness of the films showed more flat surface morphology (1.0 nm) than that of the bare PC (1.5 nm) substrate. From optical transmission and electrical resistivity measurements, it can be concluded that the optoelectrical properties of ITO films strongly depend on the Cs presence in sputtering atmosphere.