Physics-based model of the surrounding-gate MOSFET

A continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs is described. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. This model correctly traces the transition between the different operation regions without resorting to fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. The authors demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.