Electrical characteristics of a-SiGe:H/c-Si heterojunction diodes

The dark current-voltage characteristics of a-SiGe:H/c-Si pn heterojunction diodes are fitted in the range of temperature of 295-381 K by the use of an electrical model. The conduction mechanisms are determined by analyzing the temperature dependence of the parameters obtained with the fitting. In particular, two diodes with 37 nm and 86 nm amorphous layer thickness are studied. The forward current-voltage characteristics are very similar in both diodes, but the increase in the amorphous layer thickness causes an increase in the leakage reverse current.