Drain Bias Dependence of Gate Oxide Reliability in Conventional and Asymmetrical Channel MOSFETs in the Low Voltage Regime | IEEE Conference Publication | IEEE Xplore
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Drain Bias Dependence of Gate Oxide Reliability in Conventional and Asymmetrical Channel MOSFETs in the Low Voltage Regime

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K.G. Anil; S. Mahapatra; I. Eisele; V.R. Rao; J. Vasi
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Published in: 30th European Solid-State Device Research Conference
Date of Conference: 11-13 September 2000
Date Added to IEEE Xplore: 17 October 2005
Print ISBN:2-86332-248-6
DOI: 10.1109/ESSDERC.2000.194730
Conference Location: Cork, Ireland

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