Local growth of carbon nanotubes on the cantilever by chemical vapor deposition with FIB assist etching

We have controlled the local growth area of the carbon nanotubes (CNTs) on the silicon cantilever using chemical vapor deposition (CVD) with assistance of the focused ion beam (FIB) etching. By removal of the mask layer above the catalyst layer by the FIB, the CNTs were easily grown from the areas of the catalyst layer. This opens a door to the new century of the CNTs device fabrication such as, temperature sensor for the ultra small site, mass flow sensor, CNTs actuator and other various devices.