Growth of SiO/sub 2/ nanowires in presence of CuO/carbon mixed powders

The effects of carbothermal reduction of CuO powders on the growth of SiO/sub 2/ nanowires (SiONWs) on Si without the catalyst were studied. SiONWs were grown as functions of the Ar flow rate and carbon concentration in the CuO/carbon mixed powders. SiONWs could be grown at a temperature as low as 1000/spl deg/C. The minimum Ar flow rate required for growth of SiONWs was about 10 sccm. Large quantity of SiONWs was not grown without using CuO/carbon powders, indicating that the formation of CO/CO/sub 2/ gases by heating CuO/carbon mixed powders plays an important role in growth of SiONWs. Higher carbon concentration in the mixed powders enhanced the formation of SiC. The nucleation and growth of SiONWs were found to appear mainly in the cracks of Si, which were formed due to vaporization of SiO. The photoluminescence spectra of SiONWs showed a strong blue-green emission.