InP nanobridges epitaxially formed between two vertical Si surfaces

The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report the epitaxial growth on (111)-oriented Si surfaces of highly aligned, single-crystalline InP nanowires by chemical vapor deposition catalyzed by Au. We demonstrate laterally oriented InP nanowires bridging between vertical (111) Si surfaces formed by anisotropically etching a [110]-oriented Si substrate. This method of connecting nanowires offers a facile way of integrating III-V nanoelectronic and photonic devices with Si.