Metal-catalyzed silicon nanowires: control and connection

Self-assembled Si nanowires can be grown using chemical vapor deposition accelerated by metal catalyst nanoparticles. The diameter of the nanowires depends on the size of the nanoparticles, which in turn can be controlled by varying the amount of catalyst deposited and the annealing conditions. The nanowires make good electrical connection to the substrate on which they are grown. They generally grow epitaxially along <111> directions and can grow laterally from one vertical (111)-oriented surface toward another and make good mechanical and electrical connection to the second surface. The nanowires can serve as sensors or as the channels of field-effect transistors.