A 800Mb/s/pin 2GB DDR2 SDRAM using an 80nm triple metal technology

A 1.8V, 800Mbit/s/pin, 2GB DDR2 SDRAM is developed using an 80nm triple metal technology. With the triple metal technology, NMOS precharge I/O scheme and statistical analysis, DDR800 4-4-4 performance is achieved at 1.8V. For mass production, a high-speed clock using an on chip PLL and an address-pin-reduction mode are employed.