A 2.0 /spl mu/m pixel pitch MOS image sensor with an amorphous Si film color filter

A CMOS image sensor with an amorphous Si film color filter is implemented on a standard Si process. The color filter thickness is less than 100 nm. The sensor achieves a 30% aperture ratio by a 1.5 transistor/pixel architecture and a 0.15 /spl mu/m design rule.