Processing of MEMS gyroscopes on top of CMOS ICs

Integrated 10 /spl mu/m thick poly-SiGe gyroscopes are processed on top of an 8" standard 0.35 /spl mu/m CMOS wafer with 5 metal levels by using an advanced plasma-enhanced chemical vapor deposition multi-layer technology. The gyroscopes are free-moving with Q-factors for the drive mode up to 10000 at the pressure of 0.8 mTorr while the CMOS chip is fully functional.