Gettering effect of high-dose arsenic implantation and boron diffusion on gate oxide integrity in trench isolated high-voltage silicon-on-insulator process

High-dose arsenic implantation was introduced between the active silicon-on-insulator (SOI) and buried oxide in bonded and etched-back SOI wafers along with surface boron diffusion to improve the gate oxide integrity in a fully trench-isolation high-voltage SOI process. The layout effect on gettering has been investigated and qualitatively interpreted.