Polycrystalline Si films on glass substrates prepared by metal induced crystallization

Metal induced crystallization of amorphous Si (a-Si) has been studied for different deposited structures and different metal concentrations /spl lambda/ass/a-Si/Al, glass/Al/a-Si+Al and glass/a-Si+Ni. The structures were deposited at different substrate temperatures by RF magnetron sputtering and were isothermally annealed at temperatures below that of the a-Si solid phase crystallization. The annealing was performed in air, N/sub 2/ or in vacuum. Raman spectroscopy and Rutherford Back-scattering were used to study the crystallinity of the resulting poly-Si films.