Integrated 2.4 GHz class-E CMOS power amplifier

An integrated two-stage class-E power amplifier operating at the 2.4 GHz frequency range is described. The implemented power amplifier is capable of providing 21.3 dBm output power with power added efficiency of 40 % and gain of 14.3 dB at 2.4 GHz. The drain efficiency of the class-E power stage is 55 % at 21.3 dBm power. The power amplifier uses 3.3 V supply voltage and was fabricated with 0.18 /spl mu/m CMOS technology. The linear gain is 23.8 dB and the chip area 0.43 mm/sup 2/.