An improved silicon RF LDMOSFET model with a new extraction method for nonlinear drift resistance

An improved large-signal model of RF LDMOS was developed to enhance the accuracy while maintain the physical meaning. Nonlinear drift resistance was carefully investigated and extracted directly from DC measurement data using the concept of the common intrinsic drain voltage in two or more LDMOSs with different LDD lengths. The intrinsic part of the LDMOS was constructed with the popular BSIM-based model. The model was validated in DC and RF results and had good agreement with measured data.