A large-signal model of RF LDMOS with skin effects of power combining structures

An empirical large signal model is presented to have good accuracy for all the device operating regions up to 20 GHz. Skin effects of combining structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92 mm gate width is modeled and compared with measured data. P1dB of 20 dBm, 19 dB gain and 62 % PAE at P1dB in P/sub in/-P/sub out/ properties are exactly predicted by the model.