Effects of H+implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics

The effects of varying 1) hydrogen implant dose and 2) film deposition conditions have been correlated with device characteristics of accumulation-mode p-channel MOSFET's fabricated in small-grain polycrystalline-Si. Using a hydrogen implant dose of 10
¹⁵
cm
^-2
with a subsequent anneal of 400°C for 10 min in N
2
in the presence of a top encapsulating LPCVD Si
3
N
4
layer, MOSFET's with an ON/OFF current ratio of ≈ 2 × 10
⁸
have been obtained at a drain-to-source voltage of -4 V.