Modeling dopant redistribution in SiO2/WSi2/Si structure

In this paper, arsenic and boron redistributions in the SiO
2
/WSi
2
/Si structure are well characterized and successfully modeled. The solubility of arsenic in WSi
2
at different temperatures plays an important role in determining how As redistributes. Arsenic pile-up at the SiO
2
/WSi
2
interface and segregation at the WSi
2
/Si interface are also investigated. The fast segregation and growth of the precipitate of boron atoms at the SiO
2
/WSi
2
interface are the key factors in modeling boron redistribution. A novel method is introduced to simulate dopant growth at the interfaces and is implemented in the SUPREM III program.