Improvements in current gain and breakdown voltage of silicon MIS heterojunction emitter transistors

Significant improvements in the current gain and in the breakdown voltage of high gain devices are reported for silicon-bipolar transistors. These improvements were obtained by the use of a heterojunction MIS tunneling emitter with the tunneling oxide properties more carefully optimized than in earlier devices. Common-emitter current gains above 3 × 10
⁴
are reported for devices with a breakdown voltage above 30 V.