A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)

A high-current drivability doped-channel MIS-like FET (DMT) has been proposed. The DMT takes advantage of high saturation current with large transconductance and high breakdown voltage, in regard to its operating principle. The fabricated 0.5-µm gate DMT showed 310-mS/mm (410-mS/mm) transconductance and 650-mA/mm (800-mA/mm) maximum saturation current at room temperature (at 77 K). Output current values are about three or four times those for conventional two-dimensional electron gas (2DEG) FET's. Estimated average electron velocity is rather high, 1.5 × 10
⁷
cm/s (2 × 10
⁷
cm/s) at room temperature (77 K). In addition,
f_{\max}
is as high as 41 GHz. f
T
is 45 GHz, which is the best data ever reported in 0.5-µm gate FET's.