Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process

High-performance interdigitated metal-semiconductor-metal (IMSM) detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0.45 A/W, and dark currents as low as 5 nA have been observed.