Induced base transistor fabricated by molecular beam epitaxy

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain α has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.