Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's

Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 × 10
⁷
rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 10
⁵
rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.