Slant-scanning and interstice-bridging methods used to produce highly uniform ZMR Si films on quartz wafers

Two methods are applied to zone-melting recrystallization (ZMR) using a graphite-strip heater to produce highly uniform and high-quality Si films on 3-in quartz wafers. The slant-scanning method was used to prepare grain boundary (GB)-free recrystallized Si films in 180- µm-wide stripes separated by 20 µm, and the interstice-bridging method was used to reduce the {111} texture generation to less than 1 percent. The average electron mobility and the average threshold voltage for MOSFET's were 960 cm
²
/V.s with a standard deviation of 43 cm
²
/V.s and 1.38 V with a standard deviation of 0.25 V, respectively.