Fabrication and optical-switching results on the integrated light-triggered and quenched static induction thyristor

An integrated structure of the light-triggered and light-quenched (LTQ) static induction (SI) thyristor is introduced and is fabricated by the combination of the SI thyristor and SI transistor process technology. The device consists of a buried-gate light triggered (LT) SI thyristor and a p,channel surface gate static induction photo-transistor (SIPT). An anode voltage V
AK
of 500 V at an anode current I
AK
of 1 A (600 A/cm
²
: channel current density) is optically switched with a triggering power of
P_{LT} = 11
mW/cm
²
(92 µW) and a quenching power of
P_{LQ} = 11
mW/cm
²
(110 µW) in a turn-on time of 0.7 µs and a turnoff delay time of 1.0 µs. The integrated LTQ SI thyristor is a novel type of self-turn-off power device that is turned on and off by optical means.