Analytical model for predicting threshold voltage in submicrometer-channel MOSFET's

A quasi-two-dimensional analytical closed-form determination of the threshold voltage has been derived for submicrometer-channel-length MOSFET's. The invalid assumption of uniform depletion-layer width made in a prior similar computation has been corrected. A comparison between the results of previous extensive two-dimensional numerical analyses and the present analysis proves that the present model is quite accurate.