A semi-two-dimensional numerical scheme for solving impurity profile in semiconductors

An efficient numerical scheme for obtaining the two-dimensional impurity profile in semiconductors due to thermal diffusion is described. A unique combination of the alternating direction implicit (ADI) method and Gaussian elimination has resulted in a reduction of CPU time for most diffusion processes by a factor of ≥ 3, compared to other iteration schemes such as successive overrelaxation (SOR) or Stone's iterative method without additional storage requirement.