Gallium arsenide Schottky power rectifiers

This paper discusses the development of high-performance gallium arsenide Schottky rectifiers for power switching applications. These diodes are shown to exhibit superior turn-on and turn-off dynamic switching characteristics when compared with silicon p-i-n rectifiers. The theoretical analysis presented in the paper indicates that the gallium arsenide Schottky power rectifier will be attractive for high-frequency power switching circuits operating at 1.00-300 V.